Search results for " schottky"
showing 10 items of 18 documents
Characterization of Thin Passive Film-Electrolyte Junctions. The Amorphous Semiconductor (a-SC) Schottky Barrier Approach.
2017
A detailed study of the electronic properties of thin (< 20 nm) anodic TiO2 potentiostatically grown on titanium in two different solutions is presented. The results show that the nature of the anodizing solution affects the electronic properties of the anodic film and in particular the density of electronic state (DOS) distribution. Different DOS were derived from the experimental data analyzed according to the theory of amorphous semiconductor (a-SC) Schottky barrier. It is shown that the usual non-linear and frequency dependent Mott-Schottky plots are in agreement with expected theoretical behaviour of a-SC Schottky barrier. It is shown the importance of the DOS distribution in determini…
Behaviour of Nb2O5/PPy contacts: From Schottky barriers to p-n junctions
2009
In this work, a study of the photoelectrochemical responses of Nb O /PPy contacts fabricated in both organic 2 5 and aqueous solutions is performed. From the comparison between the experimental data of PPy photodeposited on Nb O in organic and in aqueous solutions, it is evident that the medium used for the photodeposition 2 5 influences the absorption coefficient, the band gap and flat band potential values.
Passive and transpassive behaviour of Alloy 31 in a heavy brine LiBr solution
2013
The passive and transpassive behaviour of Alloy 31, a highly alloyed austenitic stainless steel (UNS N08031), has been investigated in a LiBr heavy brine solution (400 g/l) at 25 °C using potentiostatic polarisation combined with electrochemical impedance spectroscopy and Mott–Schottky analysis. The passive film formed on Alloy 31 has been found to be p-type and/or n-type in electronic character, depending on the film formation potential. The thickness of the film formed at potentials within the passive region increases linearly with applied potential. The film formed at transpassive potentials is thinner and more conductive than the film formed within the passive region. These observations…
Higher PV Module Efficiency by a Novel CBS Bypass
2011
There is an increasing focus on reducing costs and improving efficiency for photovoltaic (PV) cells and modules as well as finding a more efficient approach to the product manufacturing. This letter introduces an innovative solution to bypass shaded PV cells instead of a traditional Schottky diode, in order to avoid overheating of cells in the case of partial shading. The goal is to reduce the power dissipation and improve the general efficiency of a PV generator. A novel device called cool bypass switch is then presented. It is made up of a Power MOS driven by a controller with the task to charge a storage capacitor. Tests and comparisons with standard Schottky diodes are then performed an…
Polymer/metal hybrid multilayers modified Schottky devices
2013
Insulating, polymethylmethacrylate (PMMA), and semiconducting, poly(3-hexylthiophene) (P3HT), nanometer thick polymers/Au nanoparticles based hybrid multilayers (HyMLs) were fabricated on p-Si single-crystal substrate. An iterative method, which involves, respectively, spin-coating (PMMA and P3HT deposition) and sputtering (Au nanoparticles deposition) techniques to prepare Au/HyMLs/p-Si Schottky device, was used. The barrier height and the ideality factor of the Au/HyMLs/p-Si Schottky devices were investigated by current-voltage measurements in the thickness range of 1-5 bilayers. It was observed that the barrier height of such hybrid layered systems can be tuned as a function of bilayers …
Recent advances on physico-chemical characterization of passive films by EIS and differential admittance techniques
2007
Abstract Thin Nb2O5 anodic films (∼20 nm thick) grown in phosphoric acid solution have been characterised by EIS and differential admittance study in a large range of potential and frequency. The overall electrical behaviour has been interpreted by means of the theory of amorphous semiconductor Schottky barrier in presence of a non-constant density of states (DOS). A comparison of DOS for films grown in different electrolytes is reported.
Effect of alloying elements on the electronic properties of thin passive films formed on carbon steel, ferritic and austenitic stainless steels in a …
2014
The influence of alloying elements on the electrochemical and semiconducting properties of thin passive films formed on several steels (carbon steel, ferritic and austenitic stainless steels) has been studied in a highly concentrated lithium bromide (LiBr) solution at 25 °C, by means of potentiodynamic tests and Mott Schottky analysis. The addition of Cr to carbon steel promoted the formation of a p-type semiconducting region in the passive film. A high Ni contentmodified the electronic behaviour of highly alloyed austenitic stainless steels.Mo did notmodify the electronic structure of the passive films, but reduced the concentration of defects.
Responsivity measurements of 4H-SiC Schottky photodiodes for UV light monitoring
2014
We report on the design and the electro-optical characterization of a novel class of 4H-SiC vertical Schottky UV detectors, based on the pinch-off surface effect and obtained employing Ni2Si interdigitated strips. We have measured, in dark conditions, the forward and reverse I–V characteristics as a function of the temperature and the C–V characteristics. Responsivity measurements of the devices, as a function of the wavelength (in the 200 – 400 nm range), of the package temperature and of the applied reverse bias are reported. We compared devices featured by different strip pitch size, and found that the 10 μm device pitch exhibits the best results, being the best compromise in terms of fu…
Schottky barrier height tuning by Hybrid organic-inorganic multilayers
2014
ABSTRACTSemiconducting and insulating polymers and copolymers/Au nanograins based hybrid multilayers (HyMLs) were fabricated on p-Si single-crystal substrate by an iterative method that involves, respectively, Langmuir-Blodgett and spin-coating techniques (for the deposition of organic film) and sputtering technique (for the deposition of metal nanograins) to prepare Au/HyMLs/p-Si Schottky device. The electrical properties of the Au/HyMLs/p-Si Schottky device were investigated by current-voltage (I–V) measurements in the thickness range of 1-5 bilayers (BL).At different number of layers, current-voltage (I–V) measurements were performed. Results showed a rectifying behavior. Junction parame…
Mass measurement of cooled neutron-deficient bismuth projectile fragments with time-resolved Schottky mass spectrometry at the FRS-ESR facility
2005
Masses of 582 neutron-deficient nuclides ($30\leq{Z}\leq{85}$) were measured with time-resolved Schottky mass spectrometry at the FRS-ESR facility at GSI, 117 were used for calibration. The masses of 71 nuclides were obtained for the first time. A typical mass accuracy of 30 $\mu$u was achieved. These data have entered the latest atomic mass evaluation. The mass determination of about 140 additional nuclides was possible via known energies ($Q$-values) of $\alpha-$, $\beta-$, or proton decays. The obtained results are compared with the results of other measurements.